| Summary: | 碩士 === 逢甲大學 === 電機工程學系 === 88 === In this thesis, we study the characteristics for cobalt silicide(CoSi2) formed by different technologies applied in shallow junction and capacitance. First, we make pre-implantation by N2+ to form cobalt silicide, then use SADS technology to diffusion implanted BF2+ to form P+-n junction and P+-poly gate. We discuss the effect of silicide and device by N2+ implantation. Apply N2+ implantation and SADS technology, the thermal stability, flat-band voltage, breakdown field, and breakdown charge can be improved. The defect and trap caused by BF2+ implantation can be limited in the silicide.
Another topic, we study different capping layer(TiN, Ti), high temperature(R.T.~500℃) to form cobalt silicide applied in P+-poly gate. The breakdown field and breakdown charge can be improved by TiN capping. The Ti capped silicide have lower flat-band voltage shift. Beside, the thermal stability of cobalt silicide really can be improved by high temperature sputtering, we also can give suitable thermal budget to get better characteristics of device.
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