A Study of Ultra Shallow p+/n Junction by Low Energy Ion Implantation
碩士 === 逢甲大學 === 電機工程學系 === 88 === In the thesis, The application for p+/n ultra shallow junction formed with low energy F+ ion implantation were investigated. A junction depth as shallow as 0.052um was obtained by using the lower energy F+ pre-implantation process and the junction depth d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75788855652672363303 |