A Study of Ultra Shallow p+/n Junction by Low Energy Ion Implantation
碩士 === 逢甲大學 === 電機工程學系 === 88 === In the thesis, The application for p+/n ultra shallow junction formed with low energy F+ ion implantation were investigated. A junction depth as shallow as 0.052um was obtained by using the lower energy F+ pre-implantation process and the junction depth d...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75788855652672363303 |
| Summary: | 碩士 === 逢甲大學 === 電機工程學系 === 88 === In the thesis, The application for p+/n ultra shallow junction formed with low energy F+ ion implantation were investigated. A junction depth as shallow as 0.052um was obtained by using the lower energy F+ pre-implantation process and the junction depth decreased as the F+ implantation dosage increased. We explored the effects of conventional (950℃~1050℃ 10sec)RTA vs. higher temperature/higher ramp rate/soak time (1100℃、200℃/sec、1sec)RTA, complementing the low energy implant work. We found that the higher temperature is the key factor in controlling sheet resistance.
The CoSi2 p+/n shallow junctions formed by using the Si+ pre-amorphization with different implanted dosage were investigated. Results show that the better thermal stability can be obtained by using si+ pre-amorphization process and the junction depth decreased as the Si+ pre-implantation dosage increased. Furthermore, the leakage currents are still small enough within the acceptable range for VLSI applications. It is supposed to that the CoSi2 films with si pre-amorphiaztion scheme give smaller CoSi2 grain size .
Keywords：ultra shallow junction、amorphization、RTA
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