Design and Analysis of Insulated Gate Bipolar Transistor
碩士 === 義守大學 === 電子工程學系 === 88 === Insulated-Gate Bipolar Transistor(IGBT) has superior characteristics and has substituted power BJT as an important modern power semiconductor device. However, when the turn-on current reaches critical point, the parasitic thyristor will be triggered, and...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53850712307253639302 |