The Design and Analysis of Multi-Level Dual Floating Gate Flash Memories

碩士 === 國立中興大學 === 電機工程學系 === 88 === Abstract The feasibility of multilevel Flash E2PROM cells has been discussed to increase density of bits per unit area. In the prior arts, to control the charge stored in the floating gate for multilevel operation, variable voltages or pulses are applie...

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Bibliographic Details
Main Authors: Tai-Yuan Chen, 陳泰元
Other Authors: Hongchin Lin
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/20482274717000623174