Growth microcrystalline silicon films by ECR-CVD
碩士 === 國立中興大學 === 電機工程學系 === 88 === The influence of change deposition conditions of ECR-CVD including hydrogen dilution ratio, process pressure, microwave power, substrate temperature, pulse-on time and pulse-off time of the pulse-wave modulation of MW power on the crystallization of μc-Si:H films...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96239776047521735683 |