Study of interfacial reactions of metals on Si1-xGex and Si1-x-yGexCy films
博士 === 國立成功大學 === 材料科學及工程學系 === 88 === Interfacial reactions of Co, Ni, Pd, Mo, Ti, Cu on Si0.76Ge0.24 or Si1-x-yGexCy films by pulsed KrF laser annealing, rapid thermal annealing and vacuum annealing were studied to explore the effects of annealing methods on Ge segregation, agglomeration, strain r...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2000
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Online Access: | http://ndltd.ncl.edu.tw/handle/27744471588239695629 |