Study of interfacial reactions of metals on Si1-xGex and Si1-x-yGexCy films

博士 === 國立成功大學 === 材料科學及工程學系 === 88 === Interfacial reactions of Co, Ni, Pd, Mo, Ti, Cu on Si0.76Ge0.24 or Si1-x-yGexCy films by pulsed KrF laser annealing, rapid thermal annealing and vacuum annealing were studied to explore the effects of annealing methods on Ge segregation, agglomeration, strain r...

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Bibliographic Details
Main Authors: Jian-Shing Luo, 羅建興
Other Authors: Wen-Tai Lin
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/27744471588239695629