Thermal Stability of ε1-Cu3Ge Schottky Contact on n-GaN
碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === The thermal stability of ε1-Cu3Ge Schottky contact on n-GaN was studied. Upon annealing the ideality factor (n) of the Cu-25 at.% Ge and Cu-35 at.% Ge samples first decreased with the annealing temperature up to 600℃ and then increased at 650℃. The cause for th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48002979469472623913 |