The Study and Simulation of AlInAsSb/InGaAs Double Barrier Resonant Tunneling Diodes
碩士 === 國立成功大學 === 電機工程學系 === 88 === In this dissertation, we have grown InP, InGaAs, and AlInAsSb compounds lattice matched to InP substrate by using metalorganic vapor phase epitaxy (MOVPE). Double-crystal X-ray diffraction (DCXRD), Hall measurement, secondary ion mass spectrometry (SIM...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11711968708502983683 |