Fabrication and Temperature Dependence of Characteristics of Al0.3Ga0.7As/GaAs Heterojunction Bipolar Transistor
碩士 === 國立成功大學 === 電機工程學系 === 88 === Many system applications will require transistor to operate at temperature well above ambient room temperature due to the poor thermal conductivity and power dissipation effect of GaAs substrate. Fabrication and characteristics of abrupt Al0.3Ga0.7As/Ga...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60722440183980386486 |