High Breakdown Voltage InGaP/InGaAs/AlGaAs High Electron Mobility Transistors
碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, the high breakdown InGaP/InGaAs/AlGaAs high electron mobility transistor (HEMT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been fabricated and demonstrated successfully. By using the high-bandgap InGaP Sc...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81726860258089375795 |