High Breakdown Voltage InGaP/InGaAs/AlGaAs High Electron Mobility Transistors

• Main Authors: Yen-Wei Chen, 陳彥瑋
• Other Authors: Wei-Chou Hsu
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/81726860258089375795

碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, the high breakdown InGaP/InGaAs/AlGaAs high electron mobility transistor (HEMT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been fabricated and demonstrated successfully. By using the high-bandgap InGaP Schottky layer and the pseudomorphic InGaAs channel, we can get high breakdown voltage (63V) and low-leakage current (＜40mA/mm). The maximum extrinsic transconductance is 81mS/mm and the maximum saturation drain current density is 258mA/mm. By using the wet chemical etching technique of thinning the undoped InGaP Schottky layer the device performances can be improved and we can also obtain enhancement-mode HEMT. The results show that the extrinsic transconductance can be improved and the breakdown voltage is still large (>40V). We can offer a very good tradeoff between high extrinsic transconductance and high breakdown voltage. On the other hand, we also discuss the breakdown voltage of different temperature.