High breakdown voltage doubleδ-doping InGaP/InGaAs HFETs
碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, the doubleδ-doping InGaP/InGaAs heterojuction field-effect transistors (HFET) have been successfully fabricated by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ) system. There is a large conduction band dis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61878494949631972955 |