Study of etching and oxide layers on n-GaN
碩士 === 國立成功大學 === 電機工程學系 === 88 === In this dissertation, investigation of etching, ohmic contacts, and oxide layers on n-GaN is our main work. We perform the etching of n-GaN by using KOH solution and Xenon RC-500B UV lamp illumination, named photo-enhanced chemical etching (PEC) method....
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06130771632782012410 |