Investigation of Transition Metal Carbides(TaC, WC and TiC) as diffusion Barriers for Cu Metallization

碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, the barrier properties of TaCx, WCx and TiCx films prepared by dc magnetron sputtering were investigated for the first time. According to the XRD, SEM and SIMS analyses, it was found that all the barrier films can prevent the copper from...

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Bibliographic Details
Main Authors: Sheng-Tseng Hsu, 許勝宗
Other Authors: Shui-Jinn Wang
Format: Others
Language:en_US
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/18508360437692582296