Investigation of Transition Metal Carbides(TaC, WC and TiC) as diffusion Barriers for Cu Metallization

• Main Authors: Sheng-Tseng Hsu, 許勝宗
• Other Authors: Shui-Jinn Wang
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/18508360437692582296

碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, the barrier properties of TaCx, WCx and TiCx films prepared by dc magnetron sputtering were investigated for the first time. According to the XRD, SEM and SIMS analyses, it was found that all the barrier films can prevent the copper from diffusing into Si substrate after up to 600 annealing, which is about 50~100 higher than that of pure Ta, W and Ti metal. It indicates that the carbon atom is effective in stuffing the grain boundaries of the transition metals, as a result, the fast diffusion paths for Cu diffusion were suppressed. Additionally, the diode leakage current measurement that is more sensitive than physical analyses shows that the TaCx and TiCx can inhibit the copper from deteriorating the I-V characteristic up to 500 annealing for 30min, while the highest stable temperature of WCx to preserve the diode's performance without increasing leakage current is about 550 .