Characterization and fabrication of LPD-oxide GaAs MOSFET
碩士 === 國立成功大學 === 電機工程學系 === 88 === The volatilization of group V compounds is very serious at high temperatures. Therefore, we provide a low-temperature liquid phase deposition SiO2 (LPD-SiO2) method in this article. It can deposit thin silicon dioxide (~4nm) on GaAs substrate by optimiz...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89067235860254821641 |