Studies of InAlGaP/GaAs and InAlAsSb/InP Heterostructure Transistors
博士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, the properties of In0.5(AlXGa1-X)0.5P/GaAs and In0.34Al0.66As0.85Sb0.15/InP and their important contributions to the field of electronic devices have been proposed, including single and double heterostructure-emitter bipolar transistors (SHEBT'...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75117055138396527448 |