Electric Properties of Phosphorus-Doped Triode-type Diamond Field Emission Arrays
碩士 === 國立交通大學 === 材料科學與工程系 === 88 === In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode by IC technology. First, we used a bias assisted microwave plasma chemical vapor deposition (BAMPCVD) system t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72944576310231910837 |