Evolution and Elimination of Crystalline Defects Induced by Ge+ Ion Implantation Applied to Shallow p+/n Junction Fabrication and Epitaxy of LPCVD Films
博士 === 國立交通大學 === 材料科學與工程系 === 88 === For the fabrication of the shallow p+/n junctions, Ge+ peramorphization was employed to eliminate the channeling effect of BF2+ implantation. This thesis studied the extended defects in Si subjected to various Ge+-preamorphization and BF2+ implantation. The fo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06138497886980598915 |