| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 88 === This thesis mainly investigates the thermal stability and electric properties of a low-K material ― HOSP. The dielectric constant of the HOSP film is determined to be around 2.5, and the HOSP film is found to be thermally stable up to 500℃ obtained by FTIR analysis and TDS measurement. The low dielectric constant of the HOSP is due to its cage-like structure, which looses the film density. Substitution of Si-C for highly polarized Si-O is another possible reason. The capacitance, I-V and C-V measurements as well as Bias-Temperature Stress (BTS) test were used to characterize the electric properties of the HOSP MIS capacitors. In addition, the effects of plasma curing have also been studied. Finally, we studied the barrier properties of the HOSP film. Presumably, Cu penetrates into the HOSP film and resides in the form of Cu ions, as the annealing temperature is increased.
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