Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation
碩士 === 國立交通大學 === 電子工程系 === 88 === This thesis mainly investigates the thermal stability and electric properties of a low-K material ― HOSP. The dielectric constant of the HOSP film is determined to be around 2.5, and the HOSP film is found to be thermally stable up to 500℃ obtained by FTIR analysis...
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ndltd-TW-088NCTU04280772015-10-13T10:59:52Z http://ndltd.ncl.edu.tw/handle/48638169737911290872 Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation 應用在超大型積體電路的新低介電常數聚合物之特性研究 I-Feng Chang 張逸鳳 碩士 國立交通大學 電子工程系 88 This thesis mainly investigates the thermal stability and electric properties of a low-K material ― HOSP. The dielectric constant of the HOSP film is determined to be around 2.5, and the HOSP film is found to be thermally stable up to 500℃ obtained by FTIR analysis and TDS measurement. The low dielectric constant of the HOSP is due to its cage-like structure, which looses the film density. Substitution of Si-C for highly polarized Si-O is another possible reason. The capacitance, I-V and C-V measurements as well as Bias-Temperature Stress (BTS) test were used to characterize the electric properties of the HOSP MIS capacitors. In addition, the effects of plasma curing have also been studied. Finally, we studied the barrier properties of the HOSP film. Presumably, Cu penetrates into the HOSP film and resides in the form of Cu ions, as the annealing temperature is increased. Huang-Chung Cheng 鄭晃忠 2000 學位論文 ; thesis 72 zh-TW |
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碩士 === 國立交通大學 === 電子工程系 === 88 === This thesis mainly investigates the thermal stability and electric properties of a low-K material ― HOSP. The dielectric constant of the HOSP film is determined to be around 2.5, and the HOSP film is found to be thermally stable up to 500℃ obtained by FTIR analysis and TDS measurement. The low dielectric constant of the HOSP is due to its cage-like structure, which looses the film density. Substitution of Si-C for highly polarized Si-O is another possible reason. The capacitance, I-V and C-V measurements as well as Bias-Temperature Stress (BTS) test were used to characterize the electric properties of the HOSP MIS capacitors. In addition, the effects of plasma curing have also been studied. Finally, we studied the barrier properties of the HOSP film. Presumably, Cu penetrates into the HOSP film and resides in the form of Cu ions, as the annealing temperature is increased.
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author2 |
Huang-Chung Cheng |
author_facet |
Huang-Chung Cheng I-Feng Chang 張逸鳳 |
author |
I-Feng Chang 張逸鳳 |
spellingShingle |
I-Feng Chang 張逸鳳 Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation |
author_sort |
I-Feng Chang |
title |
Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation |
title_short |
Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation |
title_full |
Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation |
title_fullStr |
Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation |
title_full_unstemmed |
Investigation of A New Low Dielectric Constant Polymer for ULSI Applcation |
title_sort |
investigation of a new low dielectric constant polymer for ulsi applcation |
publishDate |
2000 |
url |
http://ndltd.ncl.edu.tw/handle/48638169737911290872 |
work_keys_str_mv |
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