A Study of 1/f Noise in Deep Submicron MOSFETs after Soft Breakdown
碩士 === 國立交通大學 === 電子工程系 === 88 === For 3.3-nm thick gate oxide n-channel MOSFETs subjected to constant voltage stress, the gate current monitored initially behaves as the stress-induced-leakage-current (SILC), then followed by some sudden events due to soft breakdown (SBD). These SBD path...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57246154252627925219 |