The Improvement in the Reliability of Gate Oxide and Silicide by the Stacked Poly-Si Gate
碩士 === 國立交通大學 === 電子工程系 === 88 === In this thesis, we have first presented a systematic study of the physics characteristics of Ni- and Co-silicides formed on different Si substrates to recognize the effects on the thermal stability. The four point probe was used to measure the sheet resistance of...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/82783055239431198839 |