Study of Hybrid-Organic-Siloxane-Polymer (HOSP) - A Low Dielectric Constant Material for ULSI Applications

• Main Authors: Hsing Su, 蘇醒
• Other Authors: Simon M. Sze
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/62997705121535901008

碩士 === 國立交通大學 === 電子工程系 === 88 === Interconnect delay is a performance-limiting factor for ULSI circuits when feature size is scaled to the deep submicron region. Using low dielectric constant materials for the interlayer insulator is an effective way to solve this problem. We have studied a low dielectric constant material, the HOSP spin-on polymer, which has a permittivity lower than that of silicon dioxide. The low-k material is an organic compound containing silicon-oxygen, silicon-methyl, silicon-hydrogen, and carbon-hydrogen bonds. It can offer a dielectric constant as low as 2.5 under optimal conditions. In this work, the intrinsic properties such as thermal stability, the impact of oxygen plasma and copper metal gates are investigated. By employing plasma post treatment, the resistance of HOSP to oxygen plasma and copper penetration is improved significantly. In addition, the results show that the plasma-treated HOSP films have higher thermal stability. These improvements are due to the formations of inorganic layer generated by plasma processes.