study of indium super-steep-retrograde for deep submicron nMOSFET
碩士 === 國立交通大學 === 電子工程系 === 88 === The effects of indium implant energy on short-channel effect (SCE) and narrow-channel effect (NCE) were studied on NMOS devices down to 80 nm channel length. An anomalous crossover in threshold voltage roll-off curves was observed, for the first time, on...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35391088831036062709 |