Ferroelectric Properties of SBTN Thin Film
碩士 === 國立交通大學 === 電子工程系 === 88 === In recently years, ferroelectric materials have widely studied for the application of ferroelectric random access memory (FeRAM) because of their properties of high dielectric constant and high remanent polarization value. Due to their high crystallizati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97343417162406293876 |