Study on Thin Oxide Growth After Oxygen and Nitrogen Plasma Treatment
碩士 === 國立交通大學 === 電子工程系 === 88 === Thin-film characteristics of plasma treatment on silicon and silicon dioxide were studied in this thesis. Due to the superior electrical properties and thermal stability, silicon dioxide grown by thermal means has been utilized as the main gate-insulator...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89715681164783650272 |