Investigation of Plasma Treated Fluorine-Doped SiO2
碩士 === 國立交通大學 === 電子工程系 === 88 === We have studied the properties of fluorine-doped silicon dioxide (SiOF) deposited by adding CF4 to conventional tetraehylorthosilicate (TEOS)-based plasma-enhanced chemical vapor deposition (PECVD). Dielectric constants of SiOF films are reduced from 4.0...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09295638619281782789 |