The Applications of In-Situ HF Vapor Cleaning and Nitrogen Incorporation for Gate Oxides and Polysilicon Oxides
博士 === 國立交通大學 === 電子工程系 === 88 === The characteristics of gate oxides and polysilicon oxides with in-situ HF vapor cleaning and nitrogen incorporation have been investigated. A native-oxide-free silicon surface is prepared. Difference contact hole treatment ways were used to compare the difference b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12623467633341419329 |