The Thermal Properties of Hydrogen Silsesquioxane (HSQ) and the Influence of Barrier Ta and HSQ on Cu Electromigration Performance
碩士 === 國立交通大學 === 電子工程系 === 88 === As device scaling down to sub-micron, the RC time delays become the limitation to circuit speed. The solution is the use of low dielectric materials (such as HSQ) and low resistivity materials (such as copper). In this work, the influence of underlying...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/56683266358734654729 |