Thermal annealing Effects of Ni-Ta Schottky diodes on n-GaN
碩士 === 國立交通大學 === 電子物理系 === 88 === We have carried out a systematic study of Ni/Ta/n-GaN bilayer Schottky contacts on various thermal annealing conditions by using current-voltage (I-V), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) measurements. In order t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80064147901582813265 |