Time-Resolved Photoluminescence Study of Isoelectronic In and As Doped GaN Films
碩士 === 國立交通大學 === 電子物理系 === 88 === We have studied the isoelectronic (In and As) doping effects on the optical characteristics of GaN films by time-integrated and time-resolved photoluminescence. For undoped GaN with a buffer layer of 35 nm and 60 nm, the decay time of neutral-donor-bound...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05494954501688908974 |