The Study of Defects in Te-doped (AlxGa1-x)0.5In0.5P
碩士 === 國立交通大學 === 電子物理系 === 88 === Deep level transient spectroscopy was employed to measure the defects in Te-AlGaInP which were grown by metal-organic chemical vapor deposition. Samples of Te-doped (AlxGa1-x)0.5In0.5P with different composition (x=0.75, 0.5, 0.25, 0) were prepared. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76326715589663452086 |