| Summary: | 碩士 === 國立交通大學 === 電子物理系 === 88 === Deep level transient spectroscopy was employed to measure the defects in Te-AlGaInP which were grown by metal-organic chemical vapor deposition. Samples of Te-doped (AlxGa1-x)0.5In0.5P with different composition (x=0.75, 0.5, 0.25, 0) were prepared. The sample construction here is Schottky diode. Two peaks (E1 and E2) were found. Their Activation were 0.18 and 0.31eV, respectively. Trap E1 increases from x=0 to x=0.5 and decreases for x>0.5. The trap concentration (E1) has a maximum at approximately x=0.5. The trap concentration of E1 and E2 increase with increasing the donor concentration. Both of them behave similarly to Te-related deep level. Trap E1 has a maximum at the composition where the direct-indirect crossover occurs, and is a dopant related deep level. Comparing our results with other investigation into Si-, and Se-doped AlGaInP reveals that deep level (E1) have similar characteristics.
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