Study of Surface Fermi-Level and Deep Level of Undoped-GaN by Photoreflectance Spectroscopy
碩士 === 國立交通大學 === 電子物理系 === 88 === In this work , photoreflectance (PR) was used to investigate optoelectronic properties of III-V nitride compounds.Not only identified PR features of undoped-GaN、 LED-structured GaN and In0.4Ga0.6N , we also surveyed surface Fermi level and deep levels o...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28654897109928739395 |