Electrical and optical characteristics of GaAs/GaAs0.982N0.018/GaAs
碩士 === 國立交通大學 === 電子物理系 === 88 === The hetrostructure of GaAsN/GaAs quantum well has a relatively large condouction-band offset and is a suitable material for long-wavelength laser diodes（lasing at 1.3~1.5μm or longer wavelengths）. However when well thickness increase beyond the critical...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/05229793126280734125 |