Electrical and optical characteristics of GaAs/GaAs0.982N0.018/GaAs
碩士 === 國立交通大學 === 電子物理系 === 88 === The hetrostructure of GaAsN/GaAs quantum well has a relatively large condouction-band offset and is a suitable material for long-wavelength laser diodes（lasing at 1.3~1.5μm or longer wavelengths）. However when well thickness increase beyond the critical...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05229793126280734125 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系 === 88 === The hetrostructure of GaAsN/GaAs quantum well has a relatively large condouction-band offset and is a suitable material for long-wavelength laser diodes（lasing at 1.3~1.5μm or longer wavelengths）. However when well thickness increase beyond the critical thickness， lattice relaxation occurrs and the carrier depletion around the quantum well is observed . The photoluminescence reveals a strong blueshift of GaAs0.982N0.018/GaAs quantum emission . The X-ray rocking curve show that the critical thickness of GaAs0.982N0.018/GaAs single quantum well is around 175A~295A . Based on the concerntration profile ，we obtain that the conduction-band offset ΔEc of GaAs0.982N0.018/GaAs single quantum well is around 0.28eV and the ΔEv is around 50meV . The band diagram of GaAs0.982N0.018/GaAs single quantum well is shown to be Type-II . Three deep levels（active energy 0.51、0.44~0.48 and 0.16eV） are observed by DLTS in relaxed samples .
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