The Study on Diffusion Barrier Properties of Thin WN Film and Low-k Material HSQ for Copper Metallization Process
碩士 === 國立交通大學 === 應用化學系 === 88 === This thesis investigates diffusion barrier properties of thin WNx films. WNx films were deposited using Ar and N2 as sputter mixed gases, and the N2 flow rate was changed to deposit different WNx films consisted of varied N contents; then thin WNx films...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2000
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Online Access: | http://ndltd.ncl.edu.tw/handle/56174118191280691184 |