| Summary: | 碩士 === 國立交通大學 === 應用化學系 === 88 === Tantalum nitride is one of viable candidates for copper diffusion barrier materials in copper-based interconnect technology. We have studied the surface reaction of pentakis(ethylmethyl amido) tantalum
on Cu(111) surface within an UHV chamber using surface sensitive techniques, including TDS, XPS and NEXAFS. Pentakis(ethylmethyl amido) tantalum decomposed thermally to deposit thin films containing Ta, C and N atoms. The composition and chemical states were sensitively dependent on the growth conditions, including deposition and annealing temperatures. Our primary goal was to evaluate how precursor ligands affect C and N incorporation in to TaN films. Possible reaction mechanism will be presented to explain how the precursor decomposed into a mixture of tantalum carbonitride and graphite-like carbons.
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