Optical properties of GaSe thin films grown by KrF pulsed laser deposition
碩士 === 國立交通大學 === 光電工程所 === 88 === We have used pulsed laser deposition to grow GaSe thin films on the corning glass from GaSe crystal target. under the substrate temperature 450℃ and the pulsed repetation rate 20 Hz , we obtained highly oriented GaSe thin film in the (004) direction . Varying the p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81113308233574305344 |