Using X-ray diffraction and X-ray specular reflectivity techniques to determine structural parameters of Ni/Pt/Si(001)
碩士 === 國立彰化師範大學 === 物理系 === 88 === For deep submicrometer device application, low electric resistance, and narrow linewidth gate material have attracted much interest. In the recent past, the compatibility of NiSi in the self-aligned silicide process (SALICIDATION) has been investigated, and it has...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87017322188689815786 |