| Summary: | 碩士 === 國立彰化師範大學 === 物理系 === 88 === For deep submicrometer device application, low electric resistance, and narrow linewidth gate material have attracted much interest. In the recent past, the compatibility of NiSi in the self-aligned silicide process (SALICIDATION) has been investigated, and it has been demonstrated that the addition of small amount of Pt (eg ~ 5% Pt) into Ni can avoid the transformation of NiSi into high resistivity phase, and then increase the thermal stability of NiSi.
With different heat treatments, our samples show similar result with the past report, so we want to investigate the feature of Pt. In the thesis, we use X-ray diffraction and X-ray specular reflectivity techniques to determine the structure of as-deposited Ni/Pt/Si（001）sample. Utilize this techniques, we find out Pt2Si structure rather than Pt structure. The average thickness of Pt2Si layer is about 30A, r.m.s roughness is 6A, and the mass density is less than the experimental value. By the measure, we can obtain the particle size of crystalline Pt2Si is about 23 A along Pt2Si（110）, and there is an amorphous layer between silicon substrate and Pt2Si layer. The top layer is Ni layer. We can search out the diffraction peak of Ni（111）, and get the thickness of Ni layer is about 342 A, r.m.s roughness is 8 A.
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