The Studies of X-ray PhotoelectronSpectroscopy for the Interface of Gallium-Gadolinium Oxide / GalliumArsenic
碩士 === 國立中山大學 === 光電工程研究所 === 88 === This work is to study the interface properties of Gallium-Gadolinium oxide / GaAs structures. The samples we probed were produced by depositing oxide films in situ on freshly grown n type GaAs (100) surface. Three different oxides were deposited : Ga2O3, G...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55705823360679018577 |