The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu
碩士 === 國立中山大學 === 光電工程研究所 === 88 === Abstract The behaviors of the TaNx barrier layer that placed between the Cu metal and GaAs have been studied by using X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The TaNx and Cu films were deposited on GaAs sequentiall...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74202198474813337844 |