Growth and Characterization of ZnSe, ZnSxSe1-x Heterostructures on Si Substrates by Atomic Layer Epitaxy
博士 === 國立中山大學 === 電機工程學系研究所 === 88 === Abstract High quality epitaxial growth of undoped ZnSe, ZnSxSe1-x and ZnSe-ZnS strained quantum well structures were successfully grown on n-type (100)-oriented silicon substrates at 150 ºC in a horizontal cold-wall quartz reactor by low-pressure metalorganic...
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86804519666497902258 |