Theoretical Defect struture and Electronics properties of CuInSe2
碩士 === 國立中山大學 === 電機工程學系研究所 === 88 === Abstract The defect structure of CuMX2 (MºIn, Ga and XºS, Se, Te) was investigated. The defect concentrations were derived as a function of nonmolecularity( X) and nonstoichiometry( Y), and the carrier concentrations were calculated quantitatively using a theo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37911039557849411564 |