Study on the Buffer Layer and Recrystallization for the Growth of GaN by MOCVD
碩士 === 國立中山大學 === 電機工程學系研究所 === 88 === The materials based on GaN have successfully developed on short-wavelength laser diodes (LDs), light-emitting diodes (LEDs) and ultraviolet photodetector. In this study, GaN epitaxial layers have been successfully grown on sapphire substrates. We used several m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97703254199994416662 |