The Oxidation Behaviors of MoSi2 and WSi2 on Single Crystalline Si and Polycrystalline Si
博士 === 國立清華大學 === 材料科學工程學系 === 88 === The Oxidation Behaviors of MoSi2 and WSi2 on Single Crystalline Si and Polycrystalline Si have been carried out. For 180 nm thick MoSi2 layer on (111)Si, a high density of defects was found to form in silicon in samples oxidized in wet O2. The defects were ident...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79211081322012997688 |