Study of Modulation-doped Photodetector
碩士 === 國立清華大學 === 材料科學工程學系 === 88 === Modulation-doped photodetector (MODPD) grown on GaAs substrate by molecular beam epitaxy (MBE) has been shown to exhibit an excellent responsitivity in the sub-bandgap range (0.9-1.3 m). The device is basically a conventional modulation doped field effect tran...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07366541740991840849 |